Airy Function-Based Model for 2-DEG Charge and Surface Potential in N-Polar Gallium Nitride Heterostructures

A systematic, analytical method to obtain the charge density and surface potential in an N-polar GaN/AlGaN heterostructure is presented. This also provides wave functions, subband energies, band diagram. The model accounts for greater leakage of functions into spacer barrier layers structure as compared Ga-polar structure. framework based on solution Schrödinger–Poisson equations approximately triangular well with finite confinement, achieved using first-order perturbation theory. No fitting parameters are used. Results obtained our good agreement numerical results (obtained difference method) a wide range bias conditions (from OFF- ON-states) Al x Ga $_{{1}-{x}}\text{N}$ mole fractions.